www.irf.com 1 11/04/04 IRF6655 directfet ? power mosfet pd - 96926 applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate voltage typical values (unless otherwise specified) click on this section to link to the appropriate technical paper. click on this section to link to the directfet mosfets repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.89mh, r g = 25 ? , i as = 5.0a. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. fig 2. typical on-resistance vs. gate voltage description the IRF6655 combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0. 7mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor ph ase, infra- red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and proce sses. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resi stance by 80%. the IRF6655 is optimized for low power primary side bridge topologies in isolated dc-dc applications, and for high side control fet sockets in non-isolated synchronous buck dc-dc applications for use in wide range universal telecom systems (36v ? 75v), and for secondary side synchronous rectification in regulated dc-dc topologies. the reduced total losses in the device coupled with the high level of thermal perfor- mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device id eal for high performance isolated dc-dc converters. notes: lead and bromide free low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching ideal for high performance isolated converter primary switch socket ideal for control fet sockets in 36v ? 75v in synchronous buck applications low conduction losses compatible with existing surface mount techniques sq sx st sh mq mx mt mn v dss v gs r ds(on) 100v max 20v max 53m ? @ 10v q g tot q gd v gs(th) 8.7nc 2.8nc 3.9v directfet ? isometric 4 6 8 10 12 14 16 18 v gs, gate -to -source voltage (v) 0 20 40 60 80 100 120 140 160 180 200 t y p i c a l r d s ( o n ) ( m ? ) i d = 5.0a t j = 125c t j = 25c 0246810 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 5.0a absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 11 max. 3.4 19 34 20 100 4.2 5.0 sh
IRF6655 2 www.irf.com pulse width 400s; duty cycle 2%. notes: static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 100 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c r ds(on) static drain-to-source on-resistance ??? 53 62 m ? v gs(th) gate threshold voltage 2.8 ??? 4.8 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -11 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 6.6 ??? ??? s q g total gate charge ??? 8.7 11.7 q gs1 pre-vth gate-to-source charge ??? 2.1 ??? q gs2 post-vth gate-to-source charge ??? 0.58 ??? nc q gd gate-to-drain charge ??? 2.8 4.2 q godr gate charge overdrive ??? 3.2 ??? see fig. 17 q sw switch charge (q gs2 + q gd ) ??? 3.4 ??? q oss output charge ??? 4.5 ??? nc r g gate resistance ??? 1.9 2.9 ? t d(on) turn-on delay time ??? 7.4 ??? t r rise time ??? 2.8 ??? t d(off) turn-off delay time ??? 14 ??? ns t f fall time ??? 4.3 ??? c iss input capacitance ??? 530 ??? c oss output capacitance ??? 110 ??? pf c rss reverse transfer capacitance ??? 29 ??? c oss output capacitance ??? 510 ??? c oss output capacitance ??? 67 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 4.2 (body diode) a i sm pulsed source current ??? ??? 34 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 31 47 ns q rr reverse recovery charge ??? 37 56 nc mosfet symbol r g =6.0 ? v ds = 25v conditions v gs = 0v, v ds = 80v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 5.0a v ds = v gs , i d = 25a v ds = 100v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 5.0a t j = 25c, i f = 5.0a, v dd = 25v di/dt = 100a/s t j = 25c, i s = 5.0a, v gs = 0v showing the integral reverse p-n junction diode. i d = 5.0a v ds = 80v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 10v, i d = 5.0a v ds = 50v
IRF6655 www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient surface mounted on 1 in. square cu board, steady state. used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. notes: t c measured with thermocouple incontact with top (drain) of part. r is measured at t j of approximately 90c. surface mounted on 1 in. square cu board (still air). mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) mounted to a pcb with a thin gap filler and heat sink. (still air) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 1.6195 0.000126 2.1406 0.001354 22.2887 0.375850 20.0457 7.410000 11.9144 99 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri c 4 4 r 4 r 4 5 5 r 5 r 5 absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 58 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.0 r j-pcb junction-to-pcb mounted 1.4 ??? 2.2 1.4 270 -40 to + 150 max. 42
IRF6655 4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs. drain-to-source voltage fig 9. normalized typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 9.0v 8.0v 7.0v bottom 6.0v 60s pulse width tj = 25c 6.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 60s pulse width tj = 150c vgs top 15v 10v 9.0v 8.0v 7.0v bottom 6.0v 2 4 6 8 10 12 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = -40c t j = 25c t j = 150c v ds = 25v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) , ( n o r m a l i z e d ) i d = 5.0a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 4 6 8 10 i d , drain current (a) 40 60 80 100 120 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c vgs = 10v
IRF6655 www.irf.com 5 fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c t j = 25c t j = 150c v gs = 0v fig 12. maximum drain current vs. case temperatur10 fig 13. threshold voltage vs. temperature fig 14. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.86a 1.3a bottom 5.0a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 2 2.5 3 3.5 4 4.5 5 5.5 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 5 i d , d r a i n c u r r e n t ( a ) 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec 100msec
IRF6655 6 www.irf.com fig 15b. gate charge waveform fig 15a. gate charge test circuit fig 16c. unclamped inductive waveforms t p v (br)dss i as fig 16b. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd v gs d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
IRF6655 www.irf.com 7 fig 18. diode reverse recovery test circuit for n-channel hexfet ? power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period * v gs = 5v for logic level devices * inductor current circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? di/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test + - + + + - - - r g v dd d.u.t directfet ? substrate and pcb layout, sh outline (small size can, h-designation). please see directfet application note an-1035 for all details regarding pcb assembly using directfet. this includes all recommendations for stencil and substrate designs. 1- drain 2- drain 3- gate 4- source 5- drain 6- drain 3 4 5 6 1 2
IRF6655 8 www.irf.com max 0.191 0.156 0.112 0.018 0.024 0.024 0.026 0.034 0.041 0.092 0.023 0.003 0.007 code a b c d e f g h k l m n p min 4.75 3.70 2.75 0.35 0.58 0.58 0.63 0.83 0.99 2.29 0.48 0.03 0.08 max 4.85 3.95 2.85 0.45 0.62 0.62 0.67 0.87 1.03 2.33 0.58 0.08 0.17 min 0.187 0.146 0.108 0.014 0.023 0.023 0.025 0.033 0.039 0.090 0.019 0.001 0.003 imperial metric dimensions note: controlling dimensions are in mm. directfet ? outline dimension, sh outline (small size can, h-designation). please see directfet application note an-1035 for all details regarding pcb assembly using directfet. this includes all recommendations for stencil and substrate designs. directfet ? part marking
IRF6655 www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/04 directfet ? tape & reel dimension (showing component orientation). reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as IRF6655). for 1000 parts on 7" reel, order IRF6655tr1 standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c note: controlling dimensions in mm code a b c d e f g h max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 dimensions metric imperial loaded tape feed direction
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